Structure, circuit board, and circuit board manufacturing method

ABSTRACT

The disclosed structure ( 10 ) is provided with: at least three conductors ( 111, 131, 151 ) which face one-another; a through-via ( 101 ) which passes through each of the conductors ( 111, 131, 151 ); openings ( 112, 152 ) which are provided so as to surround the circumference of the through-via ( 101 ); and conductor elements ( 121, 141 ) which are located in different layers to those in which the conductors ( 111, 131, 151 ) are located, and which are connected to the through-via ( 101 ). Facing opening  112  is conductor element  121,  which is larger than said opening ( 112 ), and facing opening  152  is conductor element  141,  which is larger than said opening ( 152 ).

TECHNICAL FIELD

The present invention relates to a structure, a circuit board, and acircuit board manufacturing method.

BACKGROUND ART

In recent years, it has been known that the propagation characteristicsof electromagnetic waves can be controlled by periodically arranging aconductor pattern having a specific structure (hereinafter, referred toas a metamaterial). In particular, a metamaterial constructed tosuppress propagation of electromagnetic waves in a specific frequencyband is referred to as an electromagnetic bandgap structure(hereinafter, referred to as an EBG structure). The EBG structure isused as a countermeasure against noise propagating in a circuit board orthe like.

An example of such a technique is described in Patent Document 1 (U.S.Pat. No. 6,262,495). FIG. 2 of Patent Document 1 shows a structure, thatis, a mushroom-like EBG structure, in which plural island-like conductorelements are arranged over a sheet-like conductive plane and therespective island-like conductor elements are connected to theconductive plane through vias.

Another example of such a technique is described in Patent Document 2(JP-A-2009-21594). The technique described in Patent Document 2 is amodified example of the mushroom-like EBG structure described in PatentDocument 1 and is characterized in that a via corresponding to the stemof a mushroom is formed as a penetration via. Accordingly, it ispossible to reduce the number of processes of manufacturing a circuitboard (printed circuit board) having the mushroom-like EBG structure.

RELATED DOCUMENT Patent Document

[Patent Document 1] U.S. Pat. No. 6,262,495

[Patent Document 2] JP-A-2009-21594

DISCLOSURE OF THE INVENTION

In general, a circuit board is formed of multiple layers and includesplural penetration vias. For this reason, plural clearance holes throughwhich the penetration vias pass are formed in conductive layers of thecircuit board. In the structures disclosed in Patent Documents 1 and 2,an EBG structure is constituted in layers interposed between conductivelayers (metal layers) opposed with a conductor element (metal plate)interposed therebetween, but the EBG structure is not constructed in theother layers. Accordingly, it is possible to suppress noise between theconductive layers having the EBG structure formed therein, butelectromagnetic waves leak to the other layers not having an EBGstructure formed therein through the clearance holes, which causes aproblem as a noise countermeasure.

The invention is made in consideration of the above-mentionedcircumstances and an object thereof is to provide a structure, a circuitboard, or a circuit board manufacturing method, in which an EBGstructure is constructed between conductive layers using a penetrationvia in a multi-layered circuit board including at least three conductivelayers.

According to an aspect of the invention, there is provided a structureincluding: at least three first conductors that are opposed to eachother; a penetration via that penetrates the first conductors; anopening that is formed in at least one of the first conductors so as tosurround the penetration via passing through the first conductors andthat insulates the penetration via from the at least one firstconductor; and a plurality of second conductors that are located in aplurality of layers other than layers in which the first conductors arelocated and that are connected to the penetration via, wherein the areaof the opening is smaller than the area of any of the second conductors.

According to another aspect of the invention, there is provided acircuit board having a structure, the structure including: at leastthree first conductors that are opposed to each other; a penetration viathat penetrates the first conductors; an opening that is formed in atleast one of the first conductors so as to surround the penetration viapassing through the first conductors and that insulates the penetrationvia from the at least one first conductor; and a plurality of secondconductors that are located in a plurality of layers other than layersin which the first conductors are located and that are connected to thepenetration via, wherein the area of the opening is smaller than thearea of any of the second conductors.

According to still another aspect of the invention, there is provided acircuit board manufacturing method including the steps of: (a) arrangingat least three first conductors to be opposed to each other, arranging aplurality of second conductors in a plurality of layers other thanlayers in which the first conductors are located, and stacking the firstconductors and the second conductors to be opposed to each other; and(b) forming through-holes that penetrates the first conductors and thesecond conductors and forming a penetration via that is insulated fromat least one of the first conductors and that is connected to the secondconductors in the through holes, wherein the area of an opening that isformed in the at least one first conductor insulated from thepenetration via in the step of (b) and through which the penetration viapasses is smaller than the area of any of the second conductors.

According to the aspects of the invention, it is possible to provide astructure, a circuit board, or a circuit board manufacturing method, inwhich an EBG structure is constructed between conductive layers using apenetration via in a multi-layered circuit board including at leastthree conductive layers.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a perspective view illustrating an example of a structureaccording to an embodiment of the invention.

FIG. 2 is a diagram illustrating modified examples of a conductorelement.

FIG. 3 is a perspective view illustrating an example of a structureaccording to the embodiment of the invention.

FIG. 4 is a perspective view illustrating an example of a structureaccording to the embodiment of the invention.

FIG. 5 is a diagram illustrating modified examples of a conductor.

FIG. 6 is a perspective view illustrating an example of a structureaccording to the embodiment of the invention.

FIG. 7 is a perspective view illustrating an example of a structureaccording to the embodiment of the invention.

FIG. 8 is a perspective view illustrating an example of a structureconstructed by combining the structures according to the embodiment ofthe invention.

FIG. 9 shows a top view and a cross-sectional view of a circuit boardaccording to an embodiment of the invention.

FIG. 10 is a diagram illustrating an arrangement pattern of a structurewhich can be employed by the circuit board.

FIG. 11 is a diagram illustrating an arrangement pattern of a structurewhich can be employed by the circuit board.

FIG. 12 is a diagram illustrating an arrangement pattern of a structurewhich can be employed by the circuit board.

DESCRIPTION OF EMBODIMENTS

Hereinafter, embodiments of the invention will be described withreference to the accompanying drawings. In all the drawings, likeelements are referenced by like reference numerals and will not berepeatedly described.

FIG. 1 is a perspective view illustrating an example of a structure 10according to an embodiment of the invention. The structure 10 isconstructed by various conductive elements formed in a circuit board 100having at least an A layer 11, a B layer 12, a C layer 13, a D layer 14,and an E layer 15 (see FIG. 9).

The structure 10 includes at least three conductors 111, 131, and 151(the first conductors) opposed to each other. The structure 10 includesa penetration via 101 that penetrates the conductors 111, 131, and 151and that is insulated from at least one of the penetrated conductors111, 131, and 151. The structure 10 includes an opening 112 formed inthe conductor 111 insulated from the penetration via 101 and an opening152 formed in the conductor 151 insulated from the penetration via 101.The structure 10 includes conductor elements 121 and 141 (the secondconductors) that are located in plural layers other than the layers inwhich the conductors 111, 131, and 151 are located and that areconnected to the penetration via 101. As shown in the drawing, thepenetration via 101 passes through the opening 112 and the opening 152.The area of the opening 112 is smaller than the area of the conductorelement 121 or the conductor element 141, and the area of the opening152 is smaller than the area of the conductor element 121 or theconductor element 141. The opening 112 and the conductor element 121 areopposed to each other without any other conductor interposedtherebetween, and the opening 152 and the conductor element 141 areopposed to each other without any other conductor interposedtherebetween. A part of the conductor element 121 is opposed to theconductor (a part of the conductor 111) around the opening 112, and apart of the conductor element 141 is opposed to the conductor (a part ofthe conductor 151) around the opening 152.

The structure 10 may include layers other than the A layer 11, the Blayer 12, the C layer 13, the D layer 14, and the E layer 15. Forexample, a dielectric layer may be located between the respectivelayers. The structure 10 may further include holes, vias, signal lines,and the like not shown without conflicting the configuration of theinvention.

The opening 112 or the opening 152 may not necessarily be hollow, butmay be filled with a dielectric. That is, the penetration via 101 may beformed to penetrate the dielectric filled in the opening 112 or theopening 152 and not to come in contact with the conductor 111 or theconductor 151.

In FIG. 1, the conductors 111, 131, and 151 and the conductor elements121 and 141 are all shown as conductive flat plates. In FIG. 1, theconductors 111, 131, and 151 are shown as flat plates larger than theconductor elements 121 and 141.

When the structure 10 is repeatedly arranged in the circuit board 100,the neighboring conductors 111 are connected. The same is true of theconductors 131 and the conductors 151. The neighboring conductorelements 121 have a gap therebetween and are arranged in an islandshape. The same is true of the conductor elements 141. The sizes of theconductors 111, 131, and 151 and the sizes of the conductor elements 121and 141 have only to be determined without departing from theabove-mentioned principle. Accordingly, in the invention, the conductors111, 131, and 151 may be smaller than the conductor elements 121 and141.

In the structure 10, it is preferable that the conductor connected tothe penetration via 101 among the conductors 111, 131, and 151 functionas a ground with a reference potential applied thereto. The conductorsshould be insulated from the penetration via 101 are provided with anopening through which the penetration via 101 passes.

Here, the penetration via 101 may not penetrate the conductors locatedat both ends of the conductors 111, 131, and 151. That is, at least apart of the penetration via 101 has only to be formed in the conductor111 or the conductor 151 located at both ends.

The penetration via 101, the conductor 111, the conductor element 121,the conductor 131, the conductor element 141, and the conductor 151 maybe formed of the same material or different materials, as long as theyare formed of a conductive material.

It is assumed that the conductor 111 is located in the A layer 11, theconductor element 121 is located in the B layer 12, the conductor 131 islocated in the C layer 13, the conductor element 141 is located in the Dlayer 14, and the conductor 151 is located in the E layer 15. Therelative positional relationship of the A layer 11, the B layer 12, theC layer 13, the D layer 14, and the E layer 15 can be changed and thusthe relative positional relationship of the conductor 111, the conductorelement 121, the conductor 131, the conductor element 141, and theconductor 151 can be changed.

By employing the above-mentioned configuration, a parallel plateincluding the conductor 111 and the conductor 131 can constitute atleast a part of an electromagnetic bandgap structure along with theconductor element 121 and the penetration via 101. A parallel plateincluding the conductor 131 and the conductor 151 can constitute atleast a part of an electromagnetic bandgap structure along with theconductor element 141 and the penetration via 101. By adjusting the gapbetween the conductor 111 and the conductor element 121, the gap betweenthe conductor element 121 and the conductor 131, the gap between theconductor 131 and the conductor element 141, the gap between theconductor element 141 and the conductor 151, the thickness of thepenetration via 101, the mutual gap of the conductor element 121 or theconductor element 141, and the like, it is possible to set the frequencyband (bandgap range), in which the propagation of electromagnetic wavesshould be suppressed, to a desired value. This will be described in moredetail later.

In the structure 10 shown in FIG. 1, the conductor 111, the conductorelement 121, the conductor 131, the conductor element 141, and theconductor 151 are sequentially arranged in this order from the upperside of the drawing. The conductor 131 is connected to the penetrationvia 101. The conductor 111 and the conductor 151 are opposed to eachother with the conductor 131 interposed therebetween. The conductor 111has the opening 112 through which the penetration via 101 passes and isinsulated from the penetration via 101. The conductor 151 has theopening 152 through which the penetration via 101 passes and isinsulated from the penetration via 101.

The conductors 111, 131, and 151 and the conductor elements 121 and 141are shown in a rectangular shape, but is not limited to this shape andmay have various modified examples.

FIG. 2 is a diagram illustrating modified examples of the conductorelement 121 or the conductor element 141 of the structure 10 shown inFIG. 1. FIG. 2(A) is a top view of the conductor element 121 or theconductor element 141 used in the structure 10 shown in FIG. 1. Theconductor element 121 or 141 has a rectangular shape and can constitutea so-called mushroom-like structure 10. Specifically, the penetrationvia 101 corresponds to the stem part of a mushroom and forms inductance.On the other hand, the conductor element 121 corresponds to the headpart of the mushroom and forms capacitance along with the conductor 111opposed thereto. The conductor element 141 corresponds to the head partof a mushroom and forms capacitance along with the conductor 151 opposedthereto.

The conductor element 121 or the conductor element 141 constituting themushroom-like structure 10 is not limited to the rectangular shape, butmay have a polygonal shape such as a triangular shape or a hexagonalshape or a circular shape.

The mushroom-like EBG structure can be expressed by an equivalentcircuit in which a parallel plate is shunted with a serial resonancecircuit including the capacitance and the inductance and the resonancefrequency of the serial resonance circuit gives the central frequency ofa bandgap. Accordingly, it is possible to achieve the fall in thefrequency of the bandgap range by causing the conductor element 121 toapproach the opposed conductor 111 forming the capacitance to increasethe capacitance. However, even when the conductor element 121 is notmade to approach the opposed conductor 111, the substantial effect ofthe invention is not affected at all. It is possible to achieve the fallin the frequency of the bandgap range by causing the conductor element141 to approach the conductor 151 forming the capacitance to increasethe capacitance. Even when the conductor element 141 is not made toapproach the opposed conductor 151, the substantial effect of theinvention is not affected at all.

FIG. 2(B) is a top view illustrating an example of the conductor element121 or the conductor element 141 in the structure 10 shown in FIG. 1.The conductor element 121 or the conductor element 141 shown in thedrawing is a spiral transmission line formed in a planar direction,where one end thereof is connected to the penetration via 101 and theother end thereof is an open end. By employing the conductor element 121or the conductor element 141 shown in the drawing, the structure 10 canconstitute an open stub type EBG structure in which a microstrip lineincluding the conductor element 121 or the conductor element 141 servesas an open stub. The penetration via 101 forms inductance. On the otherhand, the conductor element 121 is electrically coupled to the conductor111 to forma microstrip line having the conductor 111 as a return path.The conductor element 141 is electrically coupled to the conductor 151to form a microstrip line having the conductor 151 as a return path.

The open stub type EBG structure can be expressed by an equivalentcircuit in which a parallel plate is shunted with a serial resonancecircuit including the open stub and the inductance and the resonancefrequency of the serial resonance circuit gives the central frequency ofa bandgap. Accordingly, by increasing the stub length of the open stubincluding the conductor element 121 or the conductor element 141, it ispossible to achieve a fall in the frequency of the bandgap range.

It is preferable that the conductor element 121 constituting themicrostrip line and the opposed conductor 111 be located close to eachother. It is preferable that the conductor element 141 constituting themicrostrip line and the opposed conductor 151 be located close to eachother. This is because as the distance between the conductor element andthe opposed plane becomes smaller, the characteristic impedance of themicrostrip line becomes lower, thereby widening the bandgap range.However, even when the conductor element 121 is not made to approach theopposed conductor 111, the substantial effect of the invention is notaffected at all. Even when the conductor element 141 is not made toapproach the opposed conductor 151, the substantial effect of theinvention is not affected at all.

FIG. 2(C) is a top view illustrating an example of the conductor element121 or the conductor element 141 in the structure 10 shown in FIG. 1.The conductor element 121 or the conductor element 141 is a rectangularconductor and has an opening. In the opening, a spiral inductor of whichan end is connected to the edge of the opening and the other end isconnected to the penetration via 101 is formed. By employing theconductor element 121 or the conductor element 141 shown in the drawing,the structure 10 can constitute an inductance-increased EBG structure inwhich inductance is increased by forming an inductor in the head part ofa mushroom in a mushroom-like EBG structure as a basic structure. Morespecifically, the conductor element 121 corresponds to the head part ofa mushroom and forms capacitance along with the opposed conductor 111.The conductor element 141 corresponds to the head part of the mushroomand forms capacitance along with the opposed conductor 151.

The inductance-increased EBG structure can be expressed by an equivalentcircuit in which a parallel plate is shunted with a serial resonancecircuit including the capacitance and the inductance and the resonancefrequency of the serial resonance circuit gives the central frequency ofa bandgap. Accordingly, by causing the conductor element 121 to approachthe conductor 111 forming the capacitance to increase the capacitance orextending the length of the inductor to increase the inductance, it ispossible to achieve a fall in the frequency of the bandgap range.However, even when the conductor element 121 is not made to approach theopposed conductor 111, the substantial effect of the invention is notaffected at all. By causing the conductor element 141 to approach theconductor 151 forming the capacitance to increase the capacitance orextending the length of the inductor to increase the inductance, it ispossible to achieve a fall in the frequency of the bandgap range.However, even when the conductor element 141 is not made to approach theopposed conductor 151, the substantial effect of the invention is notaffected at all.

FIG. 3 is a perspective view illustrating an example of the structure 10according to this embodiment. In the structure 10 shown in FIG. 3, theconductor 111 or the conductor 151 located at both ends of theconductors 111, 131, and 151 has the opening 112 or the opening 152through which the penetration via 101 passes and is insulated from thepenetration via 101. The conductor 131 located therebetween is connectedto the penetration via 101. The conductor element 121 is located abovethe conductor 111 and the conductor element 141 is located below theconductor 151.

The structure shown in FIG. 3 is a modified example of a mushroom-likeEBG structure. Specifically, the penetration via 101 corresponds to thestem part of a mushroom and forms inductance. On the other hand, theconductor element 121 or the conductor element 141 corresponds to thehead part of the mushroom and forms capacitance along with the opposedconductor 111 or the opposed conductor 151.

Similarly to the mushroom-like EBG structure, the structure shown inFIG. 3 can be expressed by an equivalent circuit in which a parallelplate is shunted with a serial resonance circuit including thecapacitance and the inductance and the resonance frequency of the serialresonance circuit gives the central frequency of a bandgap. Accordingly,it is possible to achieve the fall in the frequency of the bandgap rangeby causing the conductor element 121 or the conductor element 141 toapproach the conductor 111 or the conductor 151 forming the capacitanceto increase the capacitance. However, even when the conductor element121 or the conductor element 141 is not made to approach the opposedconductor 111 or the opposed conductor 151, the substantial effect ofthe invention is not affected at all.

The conductor element 121 or the conductor element 141 in the structure10 shown in FIG. 3 may have the shape shown in FIG. 2(B). Here, thestructure 10 similarly has the characteristics of the above-mentionedopen stub type EBG structure. The conductor element 121 or the conductorelement 141 in the structure 10 shown in FIG. 3 may have the shape shownin FIG. 2(C). Here, the structure 10 similarly has the above-mentionedcharacteristics of the inductance-increased EBG structure.

FIG. 4 is a perspective view illustrating the structure 10 according tothis embodiment. In the structure 10 shown in FIG. 4, the conductor 111,the conductor element 121, the conductor 131, the conductor element 141,and the conductor 151 are sequentially arranged in this order from theupper side of the drawing. The conductors 111 and 151 located at bothends of the conductors 111, 131, and 151 are connected to thepenetration via 101. The conductor 131 located therebetween has theopening 132 through which the penetration via 101 passes and isinsulated from the penetration via 101. The conductor element 121 islocated between the conductor 111 and the conductor 131 and theconductor element 141 is located between the conductor 131 and theconductor 151.

The structure shown in FIG. 4 is a modified example of a mushroom-likeEBG structure. Specifically, the penetration via 101 corresponds to thestem part of a mushroom and forms inductance. On the other hand, theconductor element 121 or the conductor element 141 corresponds to thehead part of the mushroom and forms capacitance along with the opposedconductor 131.

Similarly to the mushroom-like EBG structure, the structure shown inFIG. 4 can be expressed by an equivalent circuit in which a parallelplate is shunted with a serial resonance circuit including thecapacitance and the inductance and the resonance frequency of the serialresonance circuit gives the central frequency of a bandgap. Accordingly,it is possible to achieve the fall in the frequency of the bandgap rangeby causing the conductor element 121 or the conductor element 141 toapproach the conductor 131 forming the capacitance to increase thecapacitance. However, even when the conductor element 121 or theconductor element 141 is not made to approach the opposed conductor 131,the substantial effect of the invention is not affected at all.

The conductor element 121 or the conductor element 141 in the structure10 shown in FIG. 4 may have the shape shown in FIG. 2(B). Here, thestructure 10 similarly has the characteristics of the open stub type EBGstructure described with reference to FIG. 2(B).

The conductor element 121 or the conductor element 141 in the structure10 shown in FIG. 4 may have the shape shown in FIG. 2(C). Here, thestructure 10 similarly has the characteristics of theinductance-increased EBG structure described with reference to FIG.2(C).

FIG. 5 is a top view illustrating an example of the conductor 111 or theconductor 151 in the structure 10 shown in FIG. 4. The conductor 111 orthe conductor 151 shown in the drawing has an opening. In the opening, aspiral inductor of which an end is connected to the edge of the openingand the other end is connected to the penetration via 101 is formed. Theconductor 111 or the conductor 151 shown in FIG. 5 is used along withthe conductor element 121 or the conductor element 141 shown in FIG.2(A). By employing the conductor element 121 or the conductor element141 shown in FIG. 2(A) along with the conductor 111 or the conductor 151shown in FIG. 5, the structure 10 can constitute an inductance-increasedEBG structure in which inductance is increased by forming an inductor inthe conductor 111 or the conductor 151 in a mushroom-like EBG structureas a basic structure. More specifically, the conductor element 121corresponds to the head part of a mushroom and forms capacitance alongwith the opposed conductor 131. The conductor element 141 corresponds tothe head part of the mushroom and forms capacitance along with theopposed conductor 131. On the other hand, the penetration via 101corresponds to the stem part of the mushroom and forms inductance alongwith the inductor formed in the conductor 111 or the conductor 151.

The inductance-increased EBG structure can be expressed by an equivalentcircuit in which a parallel plate is shunted with a serial resonancecircuit including the capacitance and the inductance and the resonancefrequency of the serial resonance circuit gives the central frequency ofa bandgap. Accordingly, by causing the conductor element 121 or theconductor element 141 to approach the conductor 131 forming thecapacitance to increase the capacitance or extending the length of theinductor to increase the inductance, it is possible to achieve a fall inthe frequency of the bandgap range. However, even when the conductorelement 121 or the conductor element 141 is not made to approach theopposed conductor 131, the substantial effect of the invention is notaffected at all.

FIG. 6 is a perspective view illustrating an example of the structure 10according to this embodiment. In the structure 10 shown in FIG. 6, theconductor 151 is connected to the penetration via 101. The conductor 111and the conductor 131 are located on the same side with respect to theconductor 151. The conductor 111 has the opening 112 through which thepenetration via 101 passes and is insulated from the penetration via101. The conductor 131 has the opening 132 through which the penetrationvia 101 passes and is insulated from the penetration via 101. Theconductor element 121 is located between the conductor 111 and theconductor 131, and the conductor element 141 is located between theconductor 131 and the conductor 151. The conductor element 121 and theconductor element 141 are connected to the penetration via 101.

By employing the configuration shown in FIG. 6, the number of layers(the B layer 12 and the D layer 14) in which the conductor element 121or the conductor element 141 is located is equal to the number of layers(the A layer 11 and the C layer 13) in which the conductor 111 or theconductor 131 is located. More specifically, the number of the conductorelements 121 is equal to the number of the openings 112 formed in theconductors 111. The number of the conductor element 141 is equal to thenumber of the opening 132 formed in the conductors 131.

The structure 10 shown in FIG. 6 is a modified example of amushroom-like EBG structure. Specifically, the penetration via 101corresponds to the stem part of a mushroom and forms inductance. On theother hand, the conductor element 121 corresponds to the head part ofthe mushroom and forms capacitance along with the opposed conductor 111.The conductor element 141 corresponds to the head part of the mushroomand forms capacitance along with the opposed conductor 131.

Similarly to the mushroom-like EBG structure, the structure shown inFIG. 6 can be expressed by an equivalent circuit in which a parallelplate is shunted with a serial resonance circuit including thecapacitance and the inductance and the resonance frequency of the serialresonance circuit gives the central frequency of a bandgap. Accordingly,it is possible to achieve the fall in the frequency of the bandgap rangeby causing the conductor element 121 to approach the conductor 111forming the capacitance to increase the capacitance. However, even whenthe conductor element 121 is not made to approach the opposed conductor111, the substantial effect of the invention is not affected at all. Itis possible to achieve the fall in the frequency of the bandgap range bycausing the conductor element 141 to approach the conductor 131 formingthe capacitance to increase the capacitance. Even when the conductorelement 141 is not made to approach the opposed conductor 131, thesubstantial effect of the invention is not affected at all.

In the structure 10 shown in FIG. 6, the conductor element 121 isarranged to oppose the bottom surface of the conductor 111, but may bearranged to oppose the top surface of the conductor 111. In thestructure 10 shown in FIG. 6, the conductor element 141 is arranged tooppose the bottom surface of the conductor 131, but may be arranged tooppose the top surface of the conductor 131.

The conductor elements 121 and 141 in the structure 10 shown in FIG. 6may have the shape shown in FIG. 2(B). Here, the structure 10 similarlyhas the above-mentioned characteristics of the open stub type EBGstructure.

The conductor elements 121 and 141 in the structure 10 shown in FIG. 6may have the shape shown in FIG. 2(C). Here, the structure 10 similarlyhas the characteristics of the inductance-increased EBG structuredescribed with reference to FIG. 2(C). In the structure 10 shown in FIG.6, the shape shown in FIG. 5 may be employed as an example of theconductor 151. At this time, the structure 10 similarly has thecharacteristics of the inductance-increased EBG structure.

FIG. 7 is a perspective view illustrating an example of the structure 10according to this embodiment. In the structure 10 shown in FIG. 7, allof the conductor 11, the conductor 131, and the conductor 151 areinsulated from the penetration via 101. The conductor 111 has an opening112 through which the penetration via 101 passes. The conductor element121 is arranged to oppose to the opening 112. The conductor 131 has anopening 132 through which the penetration via 101 passes. The conductorelement 141 is arranged to oppose to the opening 132. The conductor 151has an opening 152 through which the penetration via 101 passes. Theconductor element 161 is arranged to oppose to the opening 152. It isassumed that the conductor element 161 is located in the F layer 16.

By employing the configuration shown in FIG. 7, the number of layers(the B layer 12, the D layer 14, and the F layer 16) in which theconductor element 121, the conductor element 141, or the conductorelement 161 is located is equal to the number of layers (the A layer 11,the C layer 13, the E layer 15) in which the conductor 111, theconductor 131, or the conductor 151 is located. More specifically, thenumber of the conductor elements 121 is equal to the number of theopenings formed in the conductors 111. The number of the conductorelements 141 is equal to the number of the openings formed in theconductors 131. The number of the conductor elements 161 is equal to thenumber of the openings formed in the conductors 151.

The structure 10 shown in FIG. 7 is a modified example of amushroom-like EBG structure. Specifically, the penetration via 101corresponds to the stem part of a mushroom and forms inductance. On theother hand, the conductor element 121 corresponds to the head part ofthe mushroom and forms capacitance along with the opposed conductor 111.The conductor element 141 corresponds to the head part of the mushroomand forms capacitance along with the opposed conductor 131. Theconductor element 161 corresponds to the head part of the mushroom andforms capacitance along with the opposed conductor 151. Since theconductor element 121 and the conductor 111 are opposed to each other toform capacitance and the opening 112 formed in the conductor 111 isincluded in the region in which both are opposed to each other, it ispossible to almost prevent the leakage of noise from the opening 112.Since the conductor element 161 and the conductor 151 are opposed toeach other to form capacitance and the opening 152 formed in theconductor 151 is included in the region in which both are opposed toeach other, it is possible to almost prevent the leakage of noise fromthe opening 152.

Similarly to the mushroom-like EBG structure, the structure shown inFIG. 7 can be expressed by an equivalent circuit in which a parallelplate is shunted with a serial resonance circuit including thecapacitance and the inductance and the resonance frequency of the serialresonance circuit gives the central frequency of a bandgap. Accordingly,it is possible to achieve the fall in the frequency of the bandgap rangeby causing the conductor element 121 to approach the conductor 111forming the capacitance to increase the capacitance. However, even whenthe conductor element 121 is not made to approach the opposed conductor111, the substantial effect of the invention is not affected at all. Itis possible to achieve the fall in the frequency of the bandgap range bycausing the conductor element 141 to approach the conductor 131 formingthe capacitance to increase the capacitance. Even when the conductorelement 141 is not made to approach the opposed conductor 131, thesubstantial effect of the invention is not affected at all. It ispossible to achieve the fall in the frequency of the bandgap range bycausing the conductor element 161 to approach the conductor 151 formingthe capacitance to increase the capacitance. Even when the conductorelement 161 is not made to approach the opposed conductor 151, thesubstantial effect of the invention is not affected at all.

In the structure 10 shown in FIG. 7, the conductor element 121 isarranged to oppose the top surface of the conductor 111, but may bearranged to oppose the bottom surface of the conductor 111. In thestructure 10 shown in FIG. 7, the conductor element 141 is arranged tooppose the top surface of the conductor 131, but may be arranged tooppose the bottom surface of the conductor 131. In the structure 10shown in FIG. 7, the conductor element 161 is arranged to oppose the topsurface of the conductor 151, but may be arranged to oppose the bottomsurface of the conductor 151.

The conductor elements 121, 141, and 161 in the structure 10 shown inFIG. 7 may have the shape shown in FIG. 2(B). Here, the structure 10similarly has the above-mentioned characteristics of the open stub typeEBG structure.

The conductor elements 121, 141, and 161 in the structure 10 shown inFIG. 7 may have the shape shown in FIG. 2(C). Here, the structure 10similarly has the characteristics of the inductance-increased EBGstructure described with reference to FIG. 2(C).

The structures 10 constituting the EBG structure using three sheet-likeconductors 111, 131, and 151 and the penetration via 101 are describedabove with reference to FIGS. 1 to 7. Another structure constituting theEBG structure using four or more sheet-like conductors and a penetrationvia may be constructed by combining the structures 10 shown in FIGS. 1to 7. For example, the structure shown in FIG. 8 is obtained bycombining the structures shown in FIGS. 1 to 6. The individual elementsare the same as described above and thus will not be repeated.

All the structures 10 described with reference to FIGS. 1 to 7 includethe penetration via 101 as a constituent. The structures 10 aremanufactured through the following manufacturing processes.

First, (a) the conductor 111, the conductor 131, the conductor 151, theconductor element 121, and the conductor element 141 are stacked tooppose each other and to be located in different layers. Then, (b) athrough-hole is formed which penetrates the conductor 111, the conductor131, the conductor 151, the conductor element 121, and the conductorelement 141 and the penetration via 101 that is insulated from at leastone of the conductors 111, 131, and 151 and that connects the conductorelement 121 and the conductor element 141 is formed in the through-hole.Here, the constituents are arranged in the process of (a) so that atleast one conductor element is opposed to the openings that is disposedin the conductor insulated from the penetration via 101 formed throughthe process of (b) and through which the penetration via 101 passes.

When there is any constituent not shown, the constituent is preferablyarranged appropriately in the process of (a). In the process of (b), themethod of forming the through-hole is not particularly limited as longas it is applicable, and for example, the through-hole may be formedwith a drill. In the process of (b), the method of forming thepenetration via 101 is not particularly limited as long as it isapplicable, and for example, the connection member may be formed byplating the inner surface of the through-hole.

FIG. 9 shows a top view and a cross-sectional view of the circuit board100 according to this embodiment. More specifically, FIG. 9(A) is a topview of the circuit board 100 and FIG. 9(B) is a cross-sectional viewtaken along the indicated sectional line in FIG. 9(A). In FIG. 9(A),squares indicated by dotted lines represent the conductor elements 121formed in the B layer 12 or the conductor elements 141 formed in the Dlayer 14 in each of the structures 10 which are repeatedly arranged. InFIG. 9(A), circles in the squares indicated by dotted lines representthe penetration via 101 formed in each of the structures 10 which arerepeatedly arranged. In FIG. 9, it is assumed that the structure 10described with reference to FIG. 5 is repeatedly arranged and thestructures 10 are illustrated with black in FIG. 9(B).

As shown in FIG. 9, the conductor elements 121 located in the B layer 12are connected to different penetration vias 101. The conductor elements141 located in the D layer 14 are connected to different penetrationvias 101.

The A layer 11, the B layer 12, the C layer 13, the D layer 14, and theE layer 15 may further include constituents other than the constituentsshown in the drawing, such as transmission lines transmitting electricalsignals. The circuit board 100 may include layers other than the A layer11, the B layer 12, the C layer 13, the D layer 14, and the E layer 15,and these layers may include the constituents other than theabove-mentioned constituents, such as transmission lines. Here, when thetransmission lines are disposed in a region in which the structure 10 isrepeatedly arranged in the circuit board 100 and in the vicinity of theregion, the characteristics of the EBG structures constituted by thestructures 10 vary and thus it is preferable to avoid this arrangement.

In the circuit board 100, it is possible to suppress the propagation ofelectromagnetic waves of the bandgap range in the region in which thestructure 10 is repeatedly arranged. That is, the structures 10 haveonly to be arranged to surround a noise source generating theelectromagnetic waves of the bandgap range or elements to be protectedfrom the electromagnetic waves of a specific frequency band and thearrangement pattern thereof may include various examples.

FIGS. 10 to 12 are diagrams illustrating the arrangement patterns of thestructures 10 which can be employed by the circuit board 100. Here, themeshed members in FIGS. 10 to 12 are a semiconductor package 161 and asemiconductor package 162. As shown in FIG. 10, the structures 10 may bearranged in a band shape between the semiconductor package 161 and thesemiconductor package 162. The structures 10 may be arranged to surroundthe semiconductor package 161 as shown in FIG. 11 or the structures 10may be arranged to surround the semiconductor package 162 as shown inFIG. 12.

Even when electromagnetic waves to be suppressed propagate in anydirection, it is possible to more effectively suppress the propagationof the electromagnetic waves by arranging the plural structures 10 so asto pass the electromagnetic waves therethrough. Accordingly, like thearrangement pattern shown in FIG. 10 or 11, the arrangement pattern inwhich the plural structures 10 are arranged in parallel in the directionfrom one semiconductor package to the other semiconductor package ismore desirable than the arrangement pattern shown in FIG. 12.

The effects of this embodiment will be described below.

The structure 10 can constitute the EBG structures by the use of theconductors 111, 131, and 151, the conductor elements 121 and 141, andthe penetration via 101. Accordingly, in the structure 10, it ispossible to suppress noise propagating in a first parallel plateincluding the conductor 111 and the conductor 131 and noise propagatingin a second parallel plate including the conductor 131 and the conductor151. Accordingly, even when there is noise leaking from the firstparallel plate to the second parallel plate or noise leaking from thesecond parallel plate to the first parallel plate, it is possible tosuppress such noise.

In the circuit board 100, it is possible to suppress noise propagatingbetween the A layer 11 and the C layer 13 and noise propagating betweenthe C layer 13 and the E layer 15 by arranging the structures 10 in aregion in which noise should be prevented from propagating. Accordingly,even when noise propagating between the A layer 11 and the C layer 13leaks into the layer between the C layer 13 and the E layer 15 throughthe C layer 13, or even when noise leaks in the reverse direction, it ispossible to suppress such noise.

All the structures 10 used in this embodiment include the penetrationvia 101. Accordingly, compared with a case in which a non-penetrationvia is employed, it is possible to reduce the number of manufacturingprocesses and to reduce the manufacturing cost.

While the embodiment of the invention has been described with referenceto the accompanying drawings, the embodiment is only an example of theinvention, and various configurations not described above may beemployed.

For example, the number of the first conductors (the conductors 111,131, and 151 in the above-mentioned embodiment) of the invention is setto three in the above-mentioned embodiment, but may be set to four ormore. As the number of the first conductors increases, the number oflayers of the structure or the circuit board increases. Here, when thenumber of parallel plates in which the propagation of noise should besuppressed increases, the number of layers in which the conductorelements corresponding to the second conductors of the invention shouldbe formed may be made to increase.

In any structure described in the above-mentioned embodiment, it hasbeen stated that at least one conductor element is opposed to therespective openings through which the penetration via, but the inventionis not limited to this configuration. That is, some of the conductorelements may be removed from the above-mentioned structure. It should benoted that the EBG structure is not constructed between the parallelplates in which the conductor elements are moved.

In the above-mentioned embodiment, all the structures 10 have a singlepenetration via 101, but the invention is not limited to thisconfiguration. That is, a configuration in which plural structures 10described in the above-mentioned embodiment are connected may beconsidered as a single structure. Accordingly, in this structure, pluralpenetration vias are repeatedly arranged and the conductor elementslocated in the same layer are connected to different connection members,respectively.

The above-mentioned embodiment and the modified examples thereof can becombined without conflicting each other. In the above-mentionedembodiment and the modified examples, the functions and the like of theconstituents are specifically described above, but the functions and thelike can be modified in various forms without departing from the conceptof the invention.

Priority is claimed on Japanese Patent Application No. 2010-051086,filed Mar. 8, 2010, the content of which is incorporated herein byreference.

1. A structure comprising: at least three first conductors that areopposed to each other; a penetration via that penetrates the firstconductors; an opening that is formed in at least one of the firstconductors so as to surround the penetration via passing through thefirst conductors and that insulates the penetration via from the atleast one first conductor; and a plurality of second conductors that arelocated in a plurality of layers other than layers in which the firstconductors are located and that are connected to the penetration via,wherein the area of the opening is smaller than the area of any of thesecond conductors.
 2. The structure according to claim 1, wherein one ofthe first conductors located at both ends of the first conductors isconnected to the penetration via, and wherein all the other firstconductors have the opening formed therein and are insulated from thepenetration via.
 3. The structure according to claim 1, wherein at leasttwo of the other first conductors are located on the same side withrespect to the one of the first conductors connected to the penetrationvia, and wherein all the other first conductors have the opening formedtherein and are insulated from the penetration via.
 4. The structureaccording to claim 1, wherein at least two of the other first conductorsare opposed to each other with the one of the first conductors connectedto the penetration via interposed therebetween, and wherein all theother first conductors have the opening formed therein and are insulatedfrom the penetration via.
 5. The structure according to claim 1, whereinall the first conductors have the opening formed therein and areinsulated from the penetration via.
 6. The structure according to claim1, wherein a plurality of the penetration vias are repeatedly arranged,and wherein the plurality of second conductors located in the same layerare connected to the different penetration vias, respectively.
 7. Thestructure according to claim 1, wherein the openings are opposed to atleast one of the second conductors.
 8. The structure according to claim7, wherein the number of the second conductors is equal to the number ofthe openings.
 9. The structure according to claim 1, wherein each of aplurality of parallel plates constructed by opposing the at least threefirst conductors to each other constitutes an electromagnetic bandgapstructure along with the penetration via and the second conductors. 10.A circuit board having a structure, the structure comprising: at leastthree first conductors that are opposed to each other; a penetration viathat penetrates the first conductors; an opening that is formed in atleast one of the first conductors so as to surround the penetration viapassing through the first conductors and that insulates the penetrationvia from the at least one first conductor; and a plurality of secondconductors that are located in a plurality of layers other than layersin which the first conductors are located and that are connected to thepenetration via, wherein the area of the opening is smaller than thearea of any of the second conductors.
 11. The circuit board according toclaim 10, wherein a plurality of the structures are repeatedly arranged,and wherein the plurality of second conductors located in the same layerare connected to the different penetration vias, respectively.
 12. Thecircuit board according to claim 10, wherein the openings are opposed toat least one of the second conductors.
 13. The circuit board accordingto claim 12, wherein the number of the second conductors is equal to thenumber of the openings.
 14. The circuit board according to claim 10,wherein each of a plurality of parallel plates constructed by the firstconductors constitutes an electromagnetic bandgap structure along withthe penetration via and the second conductors.
 15. A circuit boardmanufacturing method comprising the steps of: (a) arranging at leastthree first conductors to be opposed to each other, arranging aplurality of second conductors in a plurality of layers other thanlayers in which the first conductors are located, and stacking the firstconductors and the second conductors to be opposed to each other; and(b) forming through-holes that penetrates the first conductors and thesecond conductors and forming a penetration via that is insulated fromat least one of the first conductors and that is connected to the secondconductors in the through holes, wherein the area of an opening that isformed in the at least one first conductor insulated from thepenetration via in the step of (b) and through which the penetration viapasses is smaller than the area of any of the second conductors.
 16. Thestructure according to claim 2, wherein a plurality of the penetrationvias are repeatedly arranged, and wherein the plurality of secondconductors located in the same layer are connected to the differentpenetration vias, respectively.
 17. The structure according to claim 3,wherein a plurality of the penetration vias are repeatedly arranged, andwherein the plurality of second conductors located in the same layer areconnected to the different penetration vias, respectively.
 18. Thestructure according to claim 4, wherein a plurality of the penetrationvias are repeatedly arranged, and wherein the plurality of secondconductors located in the same layer are connected to the differentpenetration vias, respectively.
 19. The structure according to claim 5,wherein a plurality of the penetration vias are repeatedly arranged, andwherein the plurality of second conductors located in the same layer areconnected to the different penetration vias, respectively.
 20. Thestructure according to claim 2, wherein the openings are opposed to atleast one of the second conductors.